摘要
系统综述了宇航抗辐射氮化镓(GaN)功率器件及其驱动与应用技术的研究进展。首先,分析了GaN材料的宽带隙、高电子迁移率等特性及其在抗辐射、高频开关中的优势,指出器件工艺优化(如FinFET结构、垂直器件设计)和封装技术对性能提升的重要性。其次,深入探讨了宇航辐射环境(质子、中子、γ射线)对GaN器件的电性能影响机制(如阈值电压漂移、单粒子烧毁效应),并总结多层级抗辐射加固策略(材料选择、双栅结构、电路级屏蔽)。再次,梳理了GaN器件在宇航电源系统中的应用案例,如隔离DC-DC转换器(峰值效率达94%)、谐振转换器等,凸显其在提升功率密度与可靠性方面的潜力。最后,提出了未来基于GaN功率器件的宇航电源系统需突破复合辐射协同效应、高频热管理、驱动电路鲁棒性等挑战,并展望了其小型化、低成本化、智能化及大功率化的发展方向。
This paper presents a systematic review of the research progress on aerospace radiation-hardened gallium nitride(GaN)power devices and their associated driving and application technologies.Firstly,the wide bandgap and high electron mobility characteristics of GaN materials are analyzed,along with their advantages in radiation-hardened,high-frequency switching.The importance of device process optimization(e.g.,FinFET structure and vertical device design)and packaging technology for performance improvement is highlighted.Secondly,the mechanisms by which aerospace radiation environments(protons,neutrons,and gamma rays)affect the electrical properties of GaN devices(e.g.,threshold voltage shift and single-event burnout)are explored in depth,and multi-level radiation hardening strategies(e.g.,material selection,dual-gate structure,and circuit-level shielding)are summarized.Further application examples of GaN devices in aerospace power systems,such as isolated DC-DC converters(peak efficiency reaching 94%)and resonant converters,are reviewed,highlighting their potential for improving power density and reliability.Finally,challenges such as compound radiation synergy,high-frequency thermal management,and driver circuit robustness are identified,and the direction of miniaturization,cost-effectiveness,intelligence,and high power are envisioned.
作者
吕晓峰
王英武
顾黎明
许春飞
张小峰
巴得俊
万成安
LYU Xiaofeng;WANG Yingwu;GU Li Ming;XU Chunfei;ZHANG Xiaofeng;BA Dejun;WAN Cheng’an(School of Aeronautics and Astronautics,Zhejiang University,Hangzhou 310027,China;Xi'an Microelectronics Technology Institute,Xi'an 710054,China;Nanjing Electronic Devices Institute,Nanjing 210016,China;Beijing Spacecraft Co.,Ltd.,Beijing 100080,China)
出处
《微电子学与计算机》
2025年第10期101-115,共15页
Microelectronics & Computer
关键词
氮化镓器件
宇航抗辐射
氮化镓驱动器
宇航电源
gallium nitride devices
aerospace irradiation resistance
gallium nitride drivers
aerospace power supplies
