摘要
对64K CMOS随机存储器6264进行了"强光一号"长脉冲辐射状态和短脉冲辐射状态下的辐照实验,测量了存储器翻转效应,分析了不同脉冲宽度下效应的差异,绘制了存储单元的翻转位图,研究了6264的辐射损伤模式。对于6264,其存储单元的翻转主要由内部路轨塌陷引起。
Transient irradiation tests on a 64K CMOS SRAM 6264 were performed with different width γ-pulses.The numbers of upset were measured at different dose rates.Damage pattern in SRAM under transient γ-radiation was presented.The results indicate that the transient upset in 6264 is induced from rail span collapse.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2010年第1期121-123,共3页
Atomic Energy Science and Technology
