摘要
功率MOSFET器件以其高开关速度广泛应用于电源开关等领域,然而在开关过程中发热不可避免,因而其热阻更为重要,直接影响器件的可靠性。根据JEDEC JESD 51-1和JESD 51-14等标准进行了温度K系数校准,测试了稳态和瞬态下的结壳热阻和结环境热阻,得到了动态电学法和瞬态双界面法下的稳态结壳热阻值,通过瞬态加热测试得到了器件的瞬态热阻抗曲线和微分、积分结构函数,并对器件内部的物理层进行了热结构分析,得到了4阶Cauer和Foster网络RC模型。
Power MOSFETs are widely employed in power switching applications owing to their high switching speeds.However,the heat generation during switching makes thermal resistance a critical factor,directly impacting device reliability.This study applies K-factor calibration according to JEDEC JESD 51-1 and JESD 51-14 standards and measures both junction-to-case and junction-to-ambient thermal resistances under steady-state and transient conditions.The steady-state junction-to-case thermal resistance is determined using the dynamic electrical and transient dual-interface methods.Heating characterization tests yield transient heating curves,differential structure functions,and cumulative structure functions.These results are used in thermal structure analyses to segment the internal physical layers and to develop four-stage Cauer and Foster network RC thermal models.
作者
武立言
盖兆宇
赵玉佳
WU Liyan;GAI Zhaoyu;ZHAO Yujia(Beijing Microelectronics Technology Institute,Beijing 100076,P.R.China)
出处
《微电子学》
北大核心
2025年第3期501-506,共6页
Microelectronics
关键词
功率MOSFET
热阻
K系数
瞬态热阻抗
结构函数
RC模型
power MOSFET
thermal resistance
K-factor
transient thermal impedance
structure function
RC model
