摘要
介绍了一种PMOSFET耗散功率的理论估算方法,采用前级推挽式逆变器为实验平台,完成热阻实验验证。结果表明,该估算方法与实际测试结果接近,为设计散热片提供了理论依据,加快了产品开发进度,具有较好的实际应用价值。
A theoretical evaluation method of power dissipation for PMOSFET is introduced, and an experimental verification of thermal resistance is completed by using the front-stage push-pull inverter as the experimental platform. The end results show that the theoretical evaluation method is approximate to result of the experimental verification. This method provides a theoretical basis for designing heat sinks and can also speed up product development which has a better application value.
作者
钱晓东
张翠云
QIAN Xiaodong;ZHANG Cuiyun
出处
《科技创新与应用》
2020年第24期23-24,28,共3页
Technology Innovation and Application
基金
精品在线开放课程(编号:azy2019mooc27)。
关键词
PMOSFET
耗散功率
推挽
热阻
散热片
PMOSFET
power dissipation
push-pull
thermal resistance
heat sink
