摘要
利用磁控溅射技术,在不同偏压条件下在Si(001)基底上沉积了金属Cr薄膜样品。用同步辐射装置对样品进行了X-射线反射率测试,采用X-射线反射率分析法研究了不同偏压下Cr薄膜密度的变化。发现当偏压小于300 V时,偏压对所沉积的薄膜起到紧致的效果,偏压为300 V时薄膜密度最大;当偏压大于300 V时,薄膜密度减小。另外,为了探究偏压对薄膜表面形貌的影响,用扫描电子显微镜对各样品进行了表面分析,发现在偏压较小时薄膜表面较为平整;随着偏压增大,表面呈现界面分明的岛状分布。
Magnetron sputtering technology was used to deposit a series of Cr thin films under different bi- as voltages on Si （001）. The X-ray reflectivity of the sample was tested by the synchrotron radiation de- vice, and the density change of Cr thin films was studied under different bias voltages by X-ray reflection analysis. The results showed that when the bias was less than 300 V, the deposited thin films were more compact. And the film density was the largest when the bias was 300 V. When the bias voltage exceeded 300 V, the correspondent density declined. Scanning electron microscope （SEM） was used to investigate the influence of bias voltage on films＇surface morphology. The surfaces of films are relatively smooth at low bias voltages ,while the surface structure became harsh and island distribution at high bias voltages.
出处
《电镀与精饰》
CAS
北大核心
2016年第7期1-3,8,共4页
Plating & Finishing
关键词
X-射线反射率分析
铬薄膜
密度
表面形貌
磁控溅射
偏压
X-ray reflection analysis
chromium thin film
density
surface morphology
magnetron sputte-ring
bias voltage
