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铁电薄膜存储器底电极Pt/Ti的制备及性能研究 被引量:5

Research of Preparation and Properties of Lower-electrode (Pt/Ti) of Ferroelectric Thin Film Memory
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摘要 应用射频磁控溅射方法 ,在Si基片上采用不同的溅射工艺制备了铁电薄膜底电极Pt/Ti,并分析了在不同温度下退火后材料的电导率性能和粘结力性能 ,从理论和实验上分析了不同的溅射工艺和退火处理对底电极性能的影响。 Lower-electrode (Pt/Ti thin film) for ferroelectric memory on silicon substrates was made by using RF-magnetron sputtering under different conditions,and analyze their electric properties and adhesion power properties after annealing in different temperatures.We conclude the influences to these thin films with different sputtering conditions and annealing methods.
出处 《信息记录材料》 2002年第3期9-12,共4页 Information Recording Materials
关键词 铁电薄膜 存储器 底电极 Pt/Ti 制备 性能 研究 电导率 粘结力 退火 lower-electrode conductance ratio adhesion power annealing
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  • 3Kazuhide Abe, et al. PZT thin film preparation on Pt-Ti electrode by rf sprttering[J ]. Jpn. J. Appl. Phys., 1991,30(9B) :2512.
  • 4Qu Xinping, Ding Aili, Luo Weigen, et al. The Interdiffusion of Pt/ Ti Electrode and its Influence to the Ferroelectric Thin Films[J].Journal of Inorganic Materials, 1997,11 (3) :499.
  • 5宋志棠,任巍,吴小清,张良莹,姚熹.热处理温度对铁电薄膜底电极Pt和Pt/Ti物相与形貌的影响[J].材料研究学报,1997,11(4):363-368. 被引量:6

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