摘要
随着热处理温度上升，在SiO2／Si衬底上溅射的Pt、Pt／Ti电极中，构成Pt薄膜的晶粒由小变大，由分布均匀到晶粒局部聚集，最后分离成小岛.Ti层可提高Pt薄膜与基片间的粘附性和高温下的稳定化快速热处理可提高Pt薄膜在高温下的连续性.并研究了Pt薄膜对PLT铁电薄膜的成品率和分散性的影响.
Pt and Pt / Ti electrodes were dc-sputtered on Sio2 / Si substrates. As deposited samples were thermal treated at various temperatures by the common thermal annealing (CTA) process and the rapid thermal annealing (RTA) process respectively. Phase identifications and microstructures were carried out by using XRD and SEM techniques. The qualitative analysis of the compositions was held by an energy dispersive spectrum. The results indicated that the crystal grains of the Pt thin films changed from small to large and from uniform to local collective, and then separated islands with increasing the annealing temperature. The Ti layer can improve the stability of the Pt films at high temperature and the adhcsion of the Pt films on the oxidized Si wafers. Adopting the RTA process can promote the uniformity of the Pt films annealed at high temperature. The mornhologies and microstructures of the Pt and Pt / Ti electrodes have important effects on the electric properties of ferroelectric PLT thin films deposited on them.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1997年第4期363-368,共6页
Chinese Journal of Materials Research
基金
国家863高技术项目!863715050103
关键词
铁电薄膜
直流溅射
缺陷
电极
物相
形貌
铂
Pt thin films ferroelectric thin films dc-sputtering defects electrodes
