摘要
采用RF溅射制备出Ba0.65Sr0.35TiO3薄膜,剥离法制备出UFPA器件单元所需的图形化金属电极,TMAH溶液进行体硅腐蚀,并且使用保护胶和独特的夹具保护硅片正面免受腐蚀液的腐蚀。总结了一套制作微桥的简便可行的工艺流程,并最终在厚度为300μm的硅基片上成功的制备了厚度小于3μm的面积为100μm×100μm的微桥单元结构。该微桥单元可以满足制备热释电薄膜单片式UFPA器件的要求。
We prepared Ba0.65Sr0.35TiO3 thin films by RF sputtering, made the graphical metal electrode for UFPA device pixel by lift-off technique; etched the monocrystalline silicon by TMAH solution. And the micro-patterns of the front side are protected effectively without being etching by the series protective glues and unique fixture. A feasible simple procedure for making micro-bridge was summarized, and eventually obtain 100 μm × 100 μm area, less than 5 μthick micro-bridge fabrication on a 300 μm in thickness silicon chip. Preparation of the micro-bridge fabrication to meet the pyroelectric thin film UFPA device requirements.
出处
《红外技术》
CSCD
北大核心
2010年第1期17-19,共3页
Infrared Technology
