摘要
本文首次报导了用电子湮设寿命谱学法对KAP单晶极轴正向四个锥正电子湮没参数进行分析,发现在(?),(?)面第一、二类陷阱捕获率K_d、K^D均比(?),(?)面大,于是得出(?),(?)面的位错密度、点缺陷以及包裹体的“微空洞”密度均比(?),(?)大。为此,对KAP生长机理作了讨论。在此基础上,本文还简要地报导了KAP单晶生长技术、为生长优良战水溶液极性晶体,提供参考依据。
The Positron annihilation Parameters of four cones in the Positive direction of Polari-axis of KAP single crystals has been analyssd by PAT and reported for the first time.It is found that the trap capture Probability of. the first and se-cond Biases Kd and KD on(iii) and (iii) Planes is larger Shan that on (iii) and (iii) plane is larger than that on (iii) and (iii) planes. Thus,it cen be seen that the dislocation density, point-defact and 'micro-cave' density in the inclusion on (iii) and (iii) planes are all larger than those on (iii) and (iii), in accordance with the easy occurance of white streaks on (iii) and (iii) planes observed during the crystal growth. Based on this, the growth mechanism of KAP has been discussed. Furthermore. the technique of KAP is briefly introduced, so that good quality of polar crystals can be growth from the aqueous solution on this basis.
出处
《黑龙江大学自然科学学报》
CAS
1989年第3期76-76,共1页
Journal of Natural Science of Heilongjiang University
关键词
晶体
生长技术
正电子湮没
KAP
Positron anniliilat.ion' crystal, potassium acid phthealate.
