摘要
用电共沉积方法制备出４种ＩｎＧａＡｓ薄膜，用能谱析仪分析了薄膜成分，用分光光度计和单色仪测量薄膜的透射率．结果表明，ＩｎｘＧａ１－ｘＡｓ薄膜为多晶结构，晶粒尺寸约为０．２５μｍ，晶粒细致、均匀，其Ｖ－Ｉ特性是线性的，随着Ｇａ含量的减少，发光波长增大．ＩｎＧａＡｓ薄膜的发射光波长为１．３～１．５μｍ．
A novel method preparing InGaAs semiconductor thin films, electrodeposition, is presented. Under controlled technological conditions, InGaAs thin films whose radiation's wave length is between 1.3-1.5 μm were prepared through adjusting the content of Ga. The composition of the thin film was analyzed by using energy spectrum analyzer and the transmission of the film was measured by spectrophotometer and monochromator. The topograph of the film obtained by scanning electron microscopy shows that the construction of the film is a poly-crystal construction and the crystal grain is fine and homogeneous. And electric type of thin films material is n-type.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2001年第4期451-454,共4页
Chinese Journal of Materials Research
基金
航天工业总公司预研项目.
