摘要
本文应用优化工艺条件的电共沉积方法 ,制备发射光近于 1.3～ 1.5μm波长的InGaAs薄膜 .用能谱分析仪进行薄膜成分分析 ;分光光度计和单色仪测量薄膜的透射率 ,同时也测量了薄膜的V I特性、导电类型及其表面形貌 .
The principle and the experimental method of the electrodeposition are discribed in detail in this paper.InGaAs thin film was prepared by using optimized electrodeposited conditions. The radiative wave length of the film was between 1.3～1.5 μm, the composition of the film was analyzed by energy spectrometer and the transmission spectrum of the film was measured by spectrophotometer and monochromator. The V I chractristic of the conductive type and the topography of the In x Ga 1 x As film were also studied.
出处
《电化学》
CAS
CSCD
2000年第4期463-468,共6页
Journal of Electrochemistry
基金
航天工业总公司预研课题
