摘要
将原始本征 CZSi 单晶通过大剂量中子嬗变掺杂(NTD)获得了高均匀性的 NTDCZSi.采用优化的热退火工艺将 NTD 技术和 IG 技术结合起来,实现了 NTDCZSi 中氧的可控沉淀.形成了比较完整稳定的 IG 洁净区,为 LSI 和 VLSI 提供了理想的衬底.并采用深能级瞬态谱(DLTS)、中子活化分析(NNA)化学腐蚀等手段对衬底硅片进行了研究,并对形成机理进行了探讨.
Transmutation doping to original intrinsic CZSI monocrystal with a heavy dose of neutron can give a highly uniform NTDCZSI.By annealing NTDCZSI with a better technique and combining NTD technique with IG technique,we can make it possible of controlling oxygen precipitation forming a perfect denuded zone in the surface of silicon wafer,and provi- ding LSI,VLSI with an ideal substrate.In this paper,the IG effect and its mechanics in NTDCZSI has been studied by means of DLTS,NNA and chemical corrosion etc.
出处
《河北工学院学报》
1989年第3期108-112,共5页
Journal of Hubei Polytechnic University
