摘要
利用中子嬗变掺杂(NTD)技术制备的CZSi(NTDCZSi)片在高温退火时,由于辐照缺陷与直拉硅中杂质氧的相互作用,可以加速内吸除(IG)效应的实现,获得理想的表面清洁区和体内吸杂区.本文探讨了将NTD技术与IG技术相结合的问题,并讨论了NTDCZSi IG效应机理.
Because of the interaction of the irradiation defect with the impurity oxygen in CZSi, the intrinsic gettering (IG) effect could be accelerated at high temperature annealing, and it has resulted an ideal denuded zone (DZ) on the surface and an ideal gettering zone in the bulk for the NTDCZSi wafer.
In this paper, the problem of incorporation of NTD technique with IG technique is discussed, and also studied is the mechanism of IG effect for NTDCZSi.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第1期101-105,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目(NSFC
84050181)
