2KATSUKA M A, OKUI M, SUEOKA K, et al. Effect of rapid thermal annealing on oxide precipitation behavior in silicon crystal [J]. Nucl Instrum Methods Phys Res Sect B, 2002, 186: 46-49.
3YU Xuegong, MA Xiangyang, YANG Deren, et al. Effect of rapid thermal process on oxygen precipitation and denuded zone in nitrogen-doped silicon wafer [J]. Microeleclron Eng, 2003, 69:97-101.
4YANG Deren, CHU Jia, XU Jin, et al. Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen [J]. J Appl Phys, 2003, 93(1): 8925-8929.
5MAHAJAN S, ROZGONYI G A, BRASEN D, et al. A model for the formation of stacking faults in silicon [J]. Appl Phys Lett, 1977, 30: 73-77.
6FALSTER R, VORONKOV V V, QUAST F. On the properties of the intrinsic point defects in silicon: a perspective from crystal growth and wafer processing [J]. Phys Status Solidi B, 2000, 222:219-223.
7TOMAS H, L1NDSTROM J L. Enhanced oxygen precipitation in electron irradiated silicon [J]. JAppl Phys, 1992, 72 (11): 5129-5133.
