摘要
采用四探针法测电阻率、正电子湮灭法和DLTS法测缺陷和缺陷能级变化,研究了NTDCZ Si在350～1200℃等温退火时辐照缺陷的变化,确定了用于制造LSI、压敏器件等的NTDCZ Si消除辐照损伤的退火条件,并对实验现象进行了简要的讨论。
The isothermal annealing behaviour of irradiation-induced defects in NTDCZSi has been investigated by four-point probe measurement, positron-annihilation-lifetime measurement, and DLTS measurement at temperature range from 350℃ to 1200℃. The result shows that the behaviour of irradiation-induced defects are very complex below 700℃, but most of defects will be removed above 750℃, the activicy of the substitutive phosphorus donor is restored completely above 800℃, and the resistivity is lower than the actual resistivity at temperature range 800～900℃. So it is recommended that the advisable annealing temperature is 900℃ and over.
出处
《功能材料》
EI
CAS
CSCD
1991年第4期202-205,共4页
Journal of Functional Materials
