摘要
中子嬗变掺杂直拉硅(NTDCZSi)作内吸除处理时(IG 处理),清洁区(DZ)和吸杂区(GZ)的形成机理与直拉硅(CZSi)不同,它们的形成是辐照缺陷与硅中间隙氧相互作用的结果.DZ 的宽度主要取决于IG 退火时辐照空位在样品表面附近深度内过剩的宽度,GZ 则是氧以体内辐照间隙型缺陷团为核心非均匀成核形成的.氧的外扩散和体内过饱和沉淀加速了 DZ 和 GZ 的完成.
In the intrinsic gettering (IG) treatment of Neutron Transmutation Doped (NTD)CZSi,the formed mechanism of denuded zone (DZ) and gettering zone (GZ)differs from those of the CZSi.Their formation results in the interaction between the irradiation defects and the interstitial oxygen in Si The DZ width primarily depends on the excess width in the nearby depth of the sample surface of irradiation hole during IG annealing,GZ has been formed by the oxygen in the bulk,taking the irradiation interstitial defect cluster as a core to form heterogeneous nucleus.The performing of DZand GZ has been accelerated via out diffusion and supersaturation in thebulk and the deposition of oxygen.
出处
《河北工学院学报》
1989年第1期33-39,共7页
Journal of Hubei Polytechnic University
关键词
直拉硅
单晶
内吸除
中子嬗变掺杂
Neutron transmutation doping NTI
Intrinsic gettering IG
Denuded zone DZ
Gettering zone GZ
