摘要
介绍依靠拉晶速度和固液界面处的轴向温度梯度之比,影响空位和自间隙原子在直拉硅单晶中的分布。合理设计热场分布,减少直拉硅单晶中的缺陷。低剂量氧离子注入能降低SIMOX硅片顶层硅中的间隙原子浓度,从而降低穿透位错的密度。最近开发了一种称为MDZ的内吸除新技术,通过快速热退火控制硅片中空位浓度的分布,从而得到理想的氧沉淀行为,实现了可靠、可重复的内吸除。
The vacancy,intertitial and impurity atom are the point defects in silicon.The quality of silicon material can be improved through control and utilization of point defects.Distribution of vacancies and interstitials in CZ silicon crystal is governed during crystal growth depending on the ratio of v/g,where v is the pull rate of the crystal and g is the axial temperature gradient at the melt and solid interface.Densities of defects are reduced by design ofheat field.Densities of threading dislocation in the layer of top silicon of SIMOX wafer can be reduced by using oxygen ion implantation of low dose.In recent years,a new technology called the'Magic Denuded Zone'is successfully developed.Through the manipulation of vacancy concentration depth profiles by RTA,wafers with ideal oxygen precipitation behavior are obtained so that reproducible and reliable internal gettering performances is achieved.
出处
《上海有色金属》
CAS
2003年第3期129-135,共7页
Shanghai Nonferrous Metals
关键词
硅
点缺陷
氧沉淀
体微缺陷
穿透位错对
内吸除
快速热退火
半导体器件
silicon
poiont defect
oxygen precipitate
bulk microdefect
threading dislocation pairs
internal gettering
rapid thermal annealing
