摘要
本文借助背散射沟道分析技术系统地研究了Be离子注入InSb快速热退火后的剩余损伤,采用俄歇电子能谱仪分析了InSb表层组分的化学配比,并对背散射分析的结果进行了详细的讨论。
In this paper the residual damage of Be+ implanted InSb after rapid thermal annealing (RTA) has been systematically studied by rutherford backscattering (RBS) analysis technology. The influence of RTA on departure from stoichiometry in InSb surface layer has been analysed by Auger electron spectroscopy (AES) ,and the results of RBS analysis has been discussed in detail.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第1期48-51,共4页
Research & Progress of SSE
基金
中国科学院上海冶金研究所离子束开放研究实验室的部分资助
关键词
离子注入
铍
热退火
背散射
Ion Implantation,Be,Rapid Thermal Annealing,InSb,Rutherford Backscattering and Ion Channealing Analysis.
