摘要
本文用掠角背散射沟道分析技术研究了能量为147keV,剂量为2×10^(15)/cm^2,束流为20—140μA(束流强度0.41—2.86μA/cm^2)的BF_2^+注入后的<100>Si样品,分析了离子注入损伤的深度分布和移位原子浓度的变化,发现了用常规背散射沟道分析技术所不能观测到的表层损伤的束流效应细节,并对这些现象进行了讨论。
Defects in (100) Si implanted with 147 keV, 2 ×1015/cm2 BF2+ at room temperature were studied as a function of the implant current. The beam current varied from 20 to 140μA (dose rate 0. 41-2. 86μA/cm2). Using the grazing angle RBS-channeiing (scattering angle θ= 97°) instead of the conventional one (θ=165°), details of the damage distribution in near surface region (10-100nm depth) were analyzed. It was demonstrated that at an interested beam current no thermally-induced defect annealing was observed in bulk region while in near surface region (-30nm) the molecular effects would contribute to the beam current effects observed.
出处
《核技术》
CAS
CSCD
北大核心
1991年第4期217-220,共4页
Nuclear Techniques
