摘要
本文在简要介绍了 ,利用硅的各向异性腐蚀工艺研制的 ,双 E非整体弹性膜式硅芯片结构的同时 ,又较详细地报告了 ,用此芯片封装成的硅加速度敏感元件及硅加速度传感器结构 。
The silicon chip of dual E form non integral structure has been introduced, which is prepared by the technique of anisotropic wet etching of silicon and acceleration sensor element by combining this kind of silicon chip with different mass bulk and packaged based on this chip. Acceleromenter which various sensitivities and different measurement has been developed.
出处
《传感技术学报》
CAS
CSCD
2001年第4期340-343,共4页
Chinese Journal of Sensors and Actuators
