摘要
介绍利用硅的各向异性腐蚀工艺腐蚀出的一种双E形结构非整体结构弹性膜硅芯片及用此芯片封装成的压力敏感元件。借助于这种硅芯片与不同厚度的封孔膜结合 。
The silicon chip of dual-E form non-integral structure has been introduced, which is prepared by the technique of anisotropic wet etching of silicon and the sensor of pressure sealed and packaged based on this chip .By combining this kind of silicon chip with the seal-hole diaphragm of different thickness,the high performance pressure transducer with various sensitivities and different measurement ranges has been developed.
出处
《传感器技术》
CSCD
北大核心
2001年第1期26-27,共2页
Journal of Transducer Technology
