摘要
用激光束成像法对双E型传感器的硅弹性膜应变进行的研究,测出了该弹性膜的应变情况,此方法对其它结构形式的敏感芯片应变的研究也有一定的参考价值。
The strain elastic diaphragm of silicon dualE structure film form sensor is researched by using laser beam image.The strain condition of such elastic diaphragm is measured.This method also has certain reference value on the research of strain of sensitive chip of other kind of structure.
出处
《传感器技术》
CSCD
北大核心
2003年第5期8-9,12,共3页
Journal of Transducer Technology
基金
湖南省教委重点资助项目
