摘要
用Raman光散射的方法 ,观察了磁控溅射技术制备的Ge/Si系列多层膜退火处理后的各Raman峰的变化 ,对其峰形、峰位及峰强的变化进行讨论分析。实验结果显示 :Ge/Si多层膜经 70 0℃热处理 10min后 ,能改善各层的晶体质量 ,得到较完整的多层膜的结构。
The Ge/Si multilayer films were grown by magnetron sputter deposition using the single crystal Si(100) as substrate. Two kinds of multilayers were prepared. The diagrammatic sketch of samples structure was shown. Raman spectra had been used to characterize the change in structural order of these two samples as deposition and the post annealing at different temperatures. The position of peaks and their widths were discussed. The result indicated the quality of the crystal in the films has fine integrity after annealed by 700°C for 10 min.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第4期429-430,433,共3页
Journal of Functional Materials
关键词
RAMAN光谱
退火
热稳定性
锗
硅多层膜
Deposition
Films
Layered manufacturing
Magnetron sputtering
Raman spectroscopy
Silicon
Single crystals
