摘要
对Ge_xSi_(1-x)/Si超晶格的喇曼光谱研究表明,这类样品中各层间的应力分配取决于缓冲层组分。合金层中的Ge—Si峰峰移δω随组分x或应变ε作线性变化。对Ge_n/Si_n(n为原子层数)超晶格的喇曼光谱研究表明,在n=4的超薄层超晶格中,锗硅界面互混程度较小,并发现样品的生长温度对其质量有决定性影响。
Raman spectroscopy measurement shows that the stress distribution in Ge_xSi_(1-x)/Si superlatticeis determined by buffer layer composition, and the frequency shifts Oω of the Ge-Si vibrationmode in alloy layers vary linearly with the change of composition x or strain ε. On theother hand, in Ge_4/Si_4 ultrathin superlattice samples, it is found that the intermixing near layerinterface is small, and the growth temperature plays a key role in improving the quality ofsamples.
关键词
喇曼光谱
锗硅
应变层
超晶格
表征
Strain-layer superlattice
Raman scattering
Stress
Intermixing of interface
