摘要
采用离子束溅射技术生长了一系列Ge/Si多层膜,研究了沉积温度和生长停顿对Ge/Si多层膜结晶性和界面结构的影响。通过对Raman峰峰位、峰强度比值和X射线小角衍射等方面的研究,发现综合控制沉积温度和生长停顿能够得到结晶性和界面都相对理想的多层膜。这为改善Ge/Si多层膜的离子束溅射生长提供了一种有效的方法。
A series of Ge/Si multilayer films were prepared by ion-beam sputtering technique. The effects of depositon temperature and growth interruption on the crystallinity and interfacial structure of Ge/Si multilayer films were studied. The measurement of Raman spectroscope and X-ray diffraction （ XRD） showed that the crystallinity and interfacial structure of relative ideal mutilayer could be prapared by adjusting deposition temperature and growth interruption. The experiments provided an effective method to improve the ion beam sputtering method for growing Ge/Si multilayer films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第4期945-950,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金资助项目(No.60567001
No.10964016)
云南省社会发展自然基金(2008CC012)
关键词
离子束溅射
Ge/Si多层膜
沉积温度
生长停顿
ion-beam sputtering
Ge/Si multilayer films
deposition temperature
interruption
