摘要
在常温下测量了ＩＴＯ／８－羟基喹啉铝／Ｍｇ／Ａｇ结构的有机结型器件的电容－电压和伏安特性．它与常见的半导体结型器件特性有很大不同．在小偏压下，界面附近的空间电荷和表面层积累的载流子共同决定对器件的界面特性．在高偏压下，隧穿注入的载流子在膜层内的漂移对器件的电学特性产生主要影响．
Abstract A cell with tris(8 hydroquinolinato) aluminum (Alq) sandwiched by ITO glass and Metal cathode of Mg and Ag (cell structure given as ITO/Alq/Mg/Ag) has been fabricated. The capacitance voltage characteristic ( C V ) of the cell has been measured at room temperature. Its C V is different from that of P N junction in inorganic semiconductor. Under small bias, the space charge on the interfaces of Alq and the charge carrier piling up on the surface layer together affect the capacitance of the cell, and influence of space charge weakens with the increase of bias. Under very high bias (>20V), injection carriers mainly dominate the capacitance of the cell.
