摘要
介绍一种基于原子比为 1:1的InSb靶制备原子比为 1:1的InSb薄膜的方法 ,实验结果表明 。
This paper introduces a method of fabricating InSb thin film by RF sputtering in which the ratio of In to Sb is 1:1. A 1:1(the ratio of In to Sb) InSb target was used. The test results are analyzed. The experimental results indicate that in the sputtering fabrication process of the analogous compounds this method is good to the departure between the film's ingredients and target.
出处
《仪表技术与传感器》
CSCD
北大核心
2001年第7期35-36,共2页
Instrument Technique and Sensor
