摘要
本文报道BF_2^+注入的多晶硅薄膜经快速热退火后的物理和电学性质。发现造成氟异常分布的原因是由于快速热退火过程中氟的外扩散以及在多晶硅/二氧化硅界面处的聚集。在注入剂量为1×10^(15)和5×10^(15)cm^(-2)的样品中,经快速热退火后可以观察到氟泡。
The physical and electrical properties of BF2+ implanted polysilicon film subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration. Fluorine bubbles were observed in BF2+ implanted samples at doses of 1×1015 and 5×1015cm-2 after RTA.
关键词
离子注入
热退炎
氟泡
多晶硅
薄膜
Ion implantation
Rapid thermal annealing
Fluorine bubble
