摘要
本工作采用TVS测量技术,系统地研究了铝栅MOS电容中可动离子数目随^(69)Co γ辐照剂量和辐照所加偏压的变化关系。结果表明:辐照后可动离子减少,对干氧通TCE和纯干氧栅氧化电容实验都有类似的结果;在相同剂量辐照下,正偏辐照引起的可动离子碱少最大,负偏次之,零偏最小;在剂量为1×10~3—5×10~3Gy(Si)范围内,零偏辐照的可动离子减少量随剂量增大而增加,但正偏辐照似乎在1×10~5Gy(Si)时,减小量就趋于“饱和”。此外,随着TVS测量次数增加,可动离子有少量增加。最后,对实验现象的机制进行了探讨。
The mobile ion area density of MOS capacitors, before and after irradiation with different doses and bias, has been examined using the triangular voltage sweep technique. It is found that after irradiation the mobile ion area density is reduced for MOS capacitors oxidized both with dry oxygen and TCE and with dry oxygen only. The reductions of the density are compared among the samples under irradiation but with positive, negative and zero bias respectively. At zero bias the density steadily decreases with the increasing irradiation dose, but at positive bias it is nearly invariable when dose is increased to over 1 × 103Gy(Si). Small increment of the density is found when increasing the times of TVS measurement at high temperature. The experimental results are qualitatively explained.
出处
《核技术》
CAS
CSCD
北大核心
1991年第1期17-22,共6页
Nuclear Techniques
关键词
^60CO
辐照
MOS电容
可动离子
TVS technique Mobile ion area density γ-ray irradiation Electron-hole pair
