摘要
为进行10keVX射线和60Coγ射线总剂量辐射效应的比较,采用这两种辐射源对SOI(Silicon-on-Insulator)n-MOSFET在不同偏置条件下进行总剂量辐照试验,分析了SOINMOS器件在两种辐射源下辐照前后的阈值电压的漂移值并进行比较。实验结果表明,SOINMOS器件的前栅特性中X射线与60Coγ射线辐照感生阈值电压漂移值的比值α随总剂量增加而增大,而背栅特性中α值在不同偏置条件下变化趋势是不同的;在总剂量为1×106rad(Si)时,前栅器件α值为0.6～0.75,背栅器件α值为0.76～1.0。
The total dose radiation tests under the source of 10 keV X-ray and 60Co γ-ray in SOI n-MOSFET at different bias are performed,and the shifts of threshold voltage before and after irradiation in SOI n-MOSFET are analyzed and compared between the two radiation sources.It has been demonstrated factor α of SOI front gate device that is the ratio of radiation induced threshold voltage shifts with X-ray irradiation source to the shifts with 60Co γ-ray becomes large when the total dose increase,but the factor α in SOI back gate device has the different change trend with different bias,and the factor α is 0.6～0.75 in front gate device and 0.76～1.0 in back gate device when the total dose is 1×10^6 rad（Si）.
出处
《电子器件》
CAS
2010年第4期416-419,共4页
Chinese Journal of Electron Devices
基金
重点实验室基金项目资助(9140C030604070C0304)
国家十一五预研项目资助(51323060401)
