摘要
采用空气中的一次烧成工艺,研究了氧化温度对SrTiO_3.晶界层电容器试样的介电常数ε、绝缘电阻率p及介质损耗tgδ的影响;借助于TEM及STEM对试样进行了分析,观察到试样中有直线型和锯齿型两种不同类型的晶界及存在于多个晶粒交汇处的Ti_nO_(2n-1)第二晶相;提出了不同氧化温度下的晶界结构模型,较好地解释了试样介电常数随氧化温度的降低而单调增大的变化规律.
The effects of oxidizing temperature on the dielectric constant ε, resistivity p and loss factor tgδ5 of SrTiO_3 boundary layer capacitors single-fired in air were investigated. Two kinds of boundary, linear and sawtooth, and Ti_nO_(2n-1) Magneli phases precipitated at multiple grain jungtions were dirsctly observed by TEM and STEM. The models of grain boundary under different oxidizing temperatures were suggested. The regularity that the dielectric constant of samples increases monotonously with lowering oxidizing temperature was satisfactorily explained.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
1991年第2期10-14,共5页
Bulletin of the Chinese Ceramic Society
