摘要
针对悬浮区熔法生长较大直径的单晶硅时,单晶硅外部的轴向温度梯度比内部温度梯度大很多,从而导致硅单晶径向电阻率不均匀及生长裂纹的问题。通过有限元法对生长区熔硅单晶的温度场进行了数值模拟,建立了有反射环和无反射环的两种模型,得到了两种模型下的单晶温度分布图,并对比分析了两种模型下的单晶外表面温度分布及纵向温度梯度分布。研究结果表明,反射环可改善温度场分布,降低单晶硅外表面轴向温度梯度,使晶体径向温度趋于一致,提高硅单晶径向电阻率均匀性,并有效解决了生长过程中单晶硅易出现裂纹的问题。
Aiming at the problem of non-uniform radial resistivity of monocrystalline silicon , which is caused by the difference of external axi- al temperature gradient and the internal temperature gradient while the grown monocrystalline silicon has a large diameter. In order to analyze the influence of reflection ring on the temperature field, a numerical simulation of the temperature field of the monocrystalline silicon was made by using the finite element method. The models with reflection ring and without reflection ring were built to analyze the external temper- ature distribution and longitudinal temperature distribution of the monocrystalline silicon. The results indicate that the reflection ring could improve the temperature distribution and lower monocrystalline silicon＇s external temperature gradient, thus leading to a uniform radial tem- perature gradient and higher radial resistivity, then effectively avoiding cracks on the surface of the grown monocrystalline silicon.
出处
《机电工程》
CAS
2014年第1期62-66,共5页
Journal of Mechanical & Electrical Engineering
基金
国家科技重大专项资助项目(2011ZX02706-005)
关键词
悬浮区熔法
反射环
数值模拟
温度场
float zone method
reflection ring
numerical simulation
temperature field
