摘要
通过对锗单晶生长过程中诸多工艺团素的考察，找出锗单晶内出现的低阻管道现象成因。合理控制单晶生长条件，以消除低胆管道现象。
Contributing factors of the formation of low-resistive pipe inside single germanium crystal were found out after investigations into paramenters of the crystal growth process.Rationally controlled growth conditions can eliminate this low -resistive pipe.
出处
《云南冶金》
1998年第S1期50-52,130,共4页
Yunnan Metallurgy
关键词
锗单晶
低胆管道
径向电阻率
single germanium crystal low-resistive pipe readial resistivity
