摘要
在不同沉积温度（25～400℃）下，利用射频磁控溅射技术在Si（100）基底上制备了TiN薄膜。采用x射线衍射仪和原子力显微镜研究了沉积温度对膜结构和表面形貌的影响，计算了晶面间距和晶格常数，分析了薄膜的应力性质。实验结果表明，不同沉积温度下制备的TiN薄膜主要含有（111）和（220）两种取向，以（220）为择优取向；随着温度的升高，薄膜晶化质量先提高然后趋于稳定。薄膜内应力为压应力，且随温度的升高而有所增大。随沉积温度升高，薄膜晶粒尺寸变小，表面结构更加均匀致密。
TiN thin films were prepared on the surface of Si（100） by radio frequency （RF） magnetron sputtering at different temperatures （from 25 ℃ to 400 ℃）. The effect of deposition temperature on the structure and surface morphology of TiN thin film were studied by X-ray diffraction and atomic force microscopy. The interplanar distance and lattice parameter were calculated and the nature of internal stress was analyzed. The experiments results indicated that the TiN thin films prepared at different temperatures mainly contain two orientations, （111） and （220）, with the （220） plane being the preferred one. The crystallization quality of the thin film increases firstly and then becomes stable with increasing temperature. The internal stress of the thin film is compressive and increased slightly with increasing deposition temperature. The increase of deposition temperature decreases the grain size of TiN thin film and makes its surface structure become more compact and uniform.
出处
《电镀与涂饰》
CAS
CSCD
北大核心
2013年第12期39-41,共3页
Electroplating & Finishing
关键词
氮化钛
薄膜
射频磁控溅射
沉积温度
微观结构
表面形貌
titanium nitride
thin film
radio frequencymagnetron sputtering
deposition temperature
microstructure
surface morphology
