摘要
室温下,结合正交实验表,用射频磁控溅射在涤纶(PET)非织造布基材上生长AZO(Al2O3:ZnO)纳米结构薄膜。采用四探针测量仪测试AZO薄膜的方块电阻,用原子力显微镜(AFM)分析薄膜微结构;通过正交分析法对实验L9(33)AZO薄膜的性能指标进行分析。实验结果表明:溅射厚度对AZO薄膜导电性能起主导作用,其次为氩气压强和溅射功率;同时,得出制备AZO薄膜的最佳工艺为:溅射功率150W、厚度100m和气压0.2Pa,该参数下样品的方块电阻为1.633×103Ω,AZO纳米颗粒的平均直径约为69.4nm。
The aluminum oxide doped, transparent, conductive ZnO （AZO）films were deposited by RF magnetron sputtering at room temperature on substrates of polythylene terephthalate（PET）nonwovens. The microstructures and eletric properties of the AZO films were characterized with atomic force microscopy（AFM）and conventional probes. The influence of the film growth conditions on film growth was studied with mathematical statistical models. The results show that the film thickness affects more strongly the sheet resistance of the film than the argon pressure and sputtering power do. The best AZO films were grown at a sputtering power of 150 W, an argon pressure of 0.2Pa and a film thickness of 100urn. The sheet resistance of the AZO films with an averaged grain size of 69.4 nm was found to be 1. 633 ×10^3Ω.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2009年第4期419-422,共4页
Chinese Journal of Vacuum Science and Technology
基金
江苏省自然科学基金(No.BK2008106)
江南大学预研基金(No.2008LYY001)资助
关键词
PET纤维
AZO薄膜
磁控溅射
参数
优化
PET fiber, AZO films, Magnetron sputtering, Parameter, Optimization
