摘要
采用射频磁控溅射法制备了Al掺杂ZnO(ZAO)薄膜,研究了真空退火对其组织结构和光电性能的影响规律。结果表明,所制备的ZAO薄膜厚度均匀、组织致密,具有(002)择优取向的六方纤锌矿结构,400℃真空退火后,薄膜晶粒粗大,(002)晶面择优取向性进一步加强。延长退火时间对薄膜的相结构、组织形貌及晶粒大小没有明显的影响。随着退火时间的增加,薄膜的电阻率呈降低趋势,退火3 h时电阻率最低,为2.25×10-3Ω.cm,但长时间退火,电阻率变化不大。薄膜样品的透光率随真空退火时间的延长先降低,后升高,再降低;样品在真空退火4 h时对可见光的平均透过率最佳,在80%以上。退火后,ZAO薄膜的吸收边发生了蓝移现象,光学禁带宽度增大。
Al-doped ZnO（ZAO） thin films were prepared by RF magnetron sputtering and followed by vacuum-annealing for different time. The results show that the grain size of the films increases and the growth along（002） direction can be facilitated after vacuum-annealed at 400 ℃, and initially the resistivity of ZAO films remarkedty reduces with increasing vacuum-annealing time, but the effect of extending overly the annealing time on the phase structure, morphology, grain size and resistivity of ZAO films is small. After annealing for 3 h, the lowest resistivity of 2.25 × 10^-3 Ω·cm can is observed for the ZAO films. The transmittance of ZAO films reduces with increasing vacuum-annealing time initially, and then increases, and then decreases again. After annealing for 4 h, the highest transmittance over 80% is gained for ZAO films. And after annealed, there is a blue shift of absorption edge in the transmission spectra of ZAO films, that is, the optical band gap increases.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第3期417-419,共3页
Semiconductor Optoelectronics
基金
广西教育厅科研项目(200807LX121)
广西信息材料重点实验室主任基金项目(桂科能0710908-09-Z)
广西信息材料创新人材基金资助项目
桂林电子科技大学软环境建设项目(2004-54)
