摘要
基于0.18μm工艺平台,对双互锁存储单元DICE(Double Interlocked Storage Cell)结构的触发器电路进行重粒子试验,验证单粒子效应SEE(Single Event Effect)中的单粒子翻转SEU(Single Event Upset)对体硅CMOS工艺器件及电路的影响。对比分析不同频率、不同驱动能力、不同版图结构和不同电压这4种情况下的辐照数据,结果表明:当合理考虑DICE触发器的工作频率、工作电压、版图面积、结点驱动等因素时,电路的翻转次数可降为13次,翻转阈值达到33 MeV·cm2/mg。
Fabricated by 0. 18 μm COMS process,the heavy ion experiment of the double interlocked storage cell（ DICE） flip-flop structure was done to verify the effects of the single event upset（ SET） on the bulk CMOS devices and circuits. The statistics were discussed under four different situations; data of different frequency,different driving ability,different layout,and different voltage were compared with each other. Results showed that when considered the frequency,voltage,layout areas and node driven factors reasonable of the DICE structure in practical work,the number of upset could reduce to 13,the energy threshold was 33 MeV·cm2/ mg.
出处
《电子器件》
CAS
北大核心
2013年第5期594-599,共6页
Chinese Journal of Electron Devices
基金
江苏省333工程科研项目(BRA2011115)
关键词
抗辐照电路设计
DICE触发器
重粒子实验
单粒子效应
单粒子翻转
radiation hardened circuit design
double interlocked storage cell flip-flop
heavy ion experiment
single event effect
single event upset
