摘要
对1 Mbits的静态随机存储器(SRAM)进行了总剂量辐照及退火试验,试验结果表明:静、动态功耗电流均随总剂量增加而显著增大;静态功耗电流的退化与功能失效有密切相关性,非常适合作为辐射环境下器件功能失效的预警量;SRAM的读写出错数存在辐射剂量阈值,超过阈值时出错数便会指数增加;退火过程可以使器件参数恢复到初始值附近,其中高温退火对出错数的恢复作用更加明显。
Total-dose irradiation and annealing experiments have been done to the 1 Mbits CMOS SRAM. The performance and functional parameters were measured before and after irradiation and annealing. It is shown that both the static and dynamic current dissipation are increasing along with the total dose. The degradation of static current dissipation has close relation with the functional invalidation, which indicates that it can be a very suitable warning value of the latter. There is threshold total dose up which the bit errors would be exponentially increasing. During annealing, the parameters will go baek to near the initial values, and the high temperature annealing affects more on the recovery of the bit errors.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2010年第8期1087-1091,1097,共6页
Nuclear Electronics & Detection Technology
