摘要
本文采用二维数值模拟方法求解体硅CMOS IC的寄生电阻Rs、Rw 值,然后计算其相应的维持电流值,得到了与实验基本相符的结果.最后给出了Rs与设计尺寸的关系.
In numerical calculation for parasitic para-meters of bulk CMOS,it is particularlycomplicated to obtain the value of parasiticresistance Rs.This paper used 2D numericalsimulation method to find out Rs,Rw,andcalculated the corresponding holding currentIH,which is nearly identical with that gotfrom experiment.The relationship betweenRs and the design size given is of guidingsignificance for designers.
出处
《微电子学与计算机》
CSCD
北大核心
1990年第10期8-12,共5页
Microelectronics & Computer
关键词
体硅
CMOS
寄生参数
数值模拟
Bulk CMOS
Parasitic Resistance
Holding Current
Numerical Simulation
