摘要
本文阐述了宽禁带半导体材料SiC的晶体结构、材料特性及制备方法。同时综述了离子束技术在SiC研究中的应用。其中包括SiC的离子束合成、掺杂、器件隔离与钝化。
In this paper, crystal structures, material properties and thin films preparation for SiC as a wide-band gap semiconductor material were presented. Simultaneously, applications of the technique of ion beam in SiC study were described in detail. These include ion beam synthesis, imurity, device isolation and inactivity.
出处
《中山大学研究生学刊（自然科学与医学版）》
2000年第1期8-12,共5页
Journal of the Graduates Sun YAT-SEN University(Natural Sciences.Medicine)
