摘要
The behavior of Si 1- x Ge x /Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si 1- x Ge x layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.
The behavior of Si 1- x Ge x /Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si 1- x Ge x layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.
基金
Project Supported by National High Technology Research and Development( 863 ) Program of China Under GrantNo.863 -3 0 7-1 5-4
