摘要
A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.
采用简单的双台面工艺制作了完全平面结构的2个单元4个发射极指的Si Ge HBT.在没有扣除测试结构的影响下,当直流偏置IC=10mA,VCE=2·5V时,fT和fmax分别为1·8和10·1GHz.增益β为144·25,BVCBO为9V.
基金
国家高技术研究发展计划(批准号:2002AA312010)
国家重点基础研究发展规划(批准号:G2000036603)
国家自然科学基金(批准号:60336010)资助项目~~
