摘要
采用粉末靶材射频磁控溅射技术在Pt/SiO2/Si基片上制备了厚度为300nm的BaSn0.15Ti0.85O3薄膜。薄膜的沉积速度达到40nm/min,比采用传统陶瓷靶材射频磁控溅射技术的沉积速度高出1个数量级。在10kHz～1MHz的测试条件下,薄膜的介电常数随着频率的增加而减少,介电损耗均小于0.02;在-5～5V的偏置电压下,介电可调比达到59.3%。实验结果表明采用粉末靶材射频磁控溅射技术可以实现高品质铁电薄膜的快速沉积。
The BaSn0.15Ti0.85O3 （BSnT） thin films with a thickness of 300 nm have been prepared from powder target using radio frequency （RF） magnetron sputtering technique based on Pt/SiO2/Si. The deposition rate of the BSnT film is estimated to be 40 nm/min, which is fast for ferroelectric materials. The dielectric constant of the films increases with the increasing frequency from 10 kHz to 1 MHz, but the dielectric loss remains small（〈0. 02） when the frequency varies. The dielectric tunability is up to 59.3%, is achieved at a low voltage of--5--5 V. The results demonstrate that the RF magnetron sputtering from powder target is a versatile, novel technique for the deposition of high quality ferroelectric thin films. Key words： BaSn0.15Ti0.85O3 thin film; radio frequency magnetron sputtering; powder target; dielectric tunability
出处
《中国科技论文》
CAS
北大核心
2013年第3期260-262,共3页
China Sciencepaper
基金
国家级大学生创新性试验资助项目(101059528)
广西信息材料重点实验室开放基金资助项目(桂科能1110908-10-Z)
国家自然科学基金资助项目(21176051
61166008)
