摘要
本文研究了不同烧结温度的陶瓷靶材对溅射所得到的Ｐｂ（Ｚｒ，Ｔｉ）Ｏ＿３薄膜的成分、结构和性能的影响。结果表明，由１２００℃时烧结的靶所制备的薄膜中ＰｂＯ的含量偏低，而９００℃时的薄膜中ＰｂＯ的含量却大于１；由这两种靶材都获得了结晶性较好的多晶钙钛矿结构，但９００℃时烧结的靶所制备的铁电薄膜的结晶性能更好，具有较好的铁电性能，其典型的矫顽场和剩余极化强度分别为７３．２ｋＶ／ｃｍ和２５．９μＣ／ｃｍ￣２。
nect of target materials sintered at different temperature on composition,structure and property of Pb(Zr ,Ti)O_3 thin films prepared by sputtering was investigated. It is shown that the PbO content in thin films from the target sintered at 1200℃ is lower,and at sintering temperature of 900℃ the PbO content is larger than 1.Though the polycrystalline perovskite structures from the two targets were obtained,the feroelectric thin films from the target sintered at 900℃ had good crystallinity and better feroelectric property with the typical coercive field of 73.2 kV/cm and remanent polarization of 25.9μC/cm￣2.
出处
《人工晶体学报》
EI
CAS
CSCD
1995年第1期64-67,共4页
Journal of Synthetic Crystals
关键词
铁电薄膜
性能
靶材
结构
铁电陶瓷
ferroelectric thin film
property
target material
structure
sputtering
Pb(Zr,Ti)O_3
