摘要
:研究了施主杂质 Nb的含量 ,x (Nb)在 1.0 %～ 7.0 %范围变化时对 Ba Ti O3半导陶瓷的晶粒尺寸、铁电相变和电特性的影响 ,x (Nb)在 4.0 %左右时观察到了掺杂效应的转变。阻抗行为揭示出高、低施主含量样品在晶粒边界和晶粒体内载流子导电的激发能不同 ,可由随施主含量增加 ,从纯钡空位到晶界处钡空位和晶粒内部钛空位相结合的补偿缺陷模式的转变来解释。
ELECTRONIC COMPONENTS & MATERIALS (China), Vol 19, No 3, P 19 20 (Jun 2000) In Chinese The influence of donor Nb content (changing from 1 0% to 7 0% mol) on grain size, ferroelectric phase transition and electrical properties of BaTiO 3 semiconducting ceramics is studied. A change of doping effect is observed on a sample containing about 4 0% mol Nb. The impedance behavior reveals the difference of activation energy of high and low donor doped samples for carrier conduction in bulk and at grain boundaries. It can be explained by the transition of a compensation defect mode from pure barium vacancies to a combination of titanium vacancies in grain interiors and barium vacancies at grain boundaries as donor content is increased. (10 refs.)
出处
《电子元件与材料》
CAS
CSCD
2000年第3期19-20,共2页
Electronic Components And Materials
关键词
钛酸钡陶瓷
铁电相变
补偿缺陷
施主
BaTiO_3 ceramics
ferroelectric phase transition
compensation defect
donor
