摘要
实验发现Fe2O3可以有效地展宽并压抑BaSn0.11Ti0.89O3电介质陶瓷材料的居里峰值。该文研究了Fe2O3的掺杂对BaSn0.11Ti0.89O3基陶瓷的介电性能的影响。用环境扫描电镜(SEM)对不同掺杂量样品的表面形貌进行了观察。发现其介电常数-温度(ε-T)曲线、材料的抗电强度、晶粒的粒径及其分布以及晶粒生长状况等都随Fe2O3掺杂量的变化而有规律地变化,并在所获数据的基础上讨论了Fe2O3掺杂的改性机理。
The influences of dopant Fe2O3 on dielectric properties of BaSn011Ti089O3 based ceramic were studied. The information of growth of graina was available through method of SEM, and XRD was also employed for analyzing and comparing of the change in the crystal lattice of BaSn011Ti089O3. The relations between the amount of dopant and dependence of dielectric constanttemperature (εT), breaking down voltage and grain growth of materials were found and the mechanism of Fe2O3 doping is briefly discussed on the base of data obtained.
出处
《压电与声光》
CSCD
北大核心
2003年第4期312-314,共3页
Piezoelectrics & Acoustooptics
关键词
钛酸钡
铁电
氧化铁
电介质陶瓷
Barium titanate
ferroelectrics
ferric oxide
dielectric ceramic
