摘要
要同时保证 PTCR材料和元件具有低室温电阻率和较高的 PTC特性 ,有较大难度。研究了添加 Si3N4作为烧结助剂 ,对 PTCR材料的显微结构和电学性能的影响。同添加 Si O2 作为烧结助剂相比 ,添加 1.0 %的 Si3N4的 PTCR材料更易同时满足低阻高性能要求。
A PTC component that possesses low resistivity at room temperature and high PTC characteristic is acquired by using Si 3N 4 as sintering additive. The effect of Si 3N 4 additive on the microstructure and electric properties is studied. The results show that to achieve the above mentioned characters, as sintering additive, Si 3N 4 is more efficient. (7 rtfs.)
出处
《电子元件与材料》
CAS
CSCD
2000年第4期15-17,共3页
Electronic Components And Materials
