摘要
用深能级瞬态谱(DLTS)方法研究了组分范围为x=0.11-0.95的掺Te的GaAs_(1-x)P_(?)混晶中的深能级.结果表明:样品中出现的深能级可分为A,B,C三类,其发射率激活能各约为:E_(?)~A=0.18ev,E_(?)~B=0.28eV,E_(?)~C=0.38eV.其中只有A能级在x=0.23-0.95间的所有样品中出现,B和C能级的出现不存在明显的规律性.进一步研究了A能级的性质后,认为它来源于Te替位杂质的DX中心,而B、C能级的性质可能比较复杂.
Deep donor levels in Te-doped GaAs_(1-x)Px for the composition range of x=0.11-0.95have been studied by Deep level Transient Spectroscopy (DLTS). Three kinds of deep levelsA,B and C with emission activation energies of E_c^A=0.18eV, E_c^B=0.28eV, and E_c^C=0.38 eV were observed in these samples except for the sample with composition of x=0.11.Only level A appears in all samples. No any regularity for the presentation of B and C levelswas able to find. After further study on the emission and capture properties as well as theircomposition dependence for level A, it is considered that level A is originated from the DXcenter formed by substitutional Te impurities and the properties of B and C levels might be morecomplicated.
基金
国家自然科学基金
