摘要
报道了Ｎ－Ｇａ＿（１－ｘ）Ａｌ＿ｘＡｓ低温光伏的异常特性．在暗条件下降温的样品，其低温光伏的初始强度比受光照的样品的光伏初始强度大得多，对这两种不同初始条件，当样品加热到大约１００～１５０Ｋ时，其低温光伏强度发生跳跃．这些异常特性归因于Ｎ－Ｇａ＿（１－ｘ）Ａｌ＿ｘＡｓ（ｘ＞０．２２）中的ＤＸ中心的电荷态变化．
An unusual behavior of the photovoltage for N-Ga_(1-x)Al_xAs at low tempera-ture was reported. The initial intensities of the photovoltage for the samples cooled in darknesswere much larger than that for the samples irradiated. The photovoltaic jump occurred when thesamples were heated to about 100～150 K under both of these different initial conditions. Theunusual behavior was assigned to the change of charge state of DX centers in N-Ga_(1-x)Al_xAs(x>O.22).
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1995年第5期711-714,共4页
Journal of Xiamen University：Natural Science
基金
福建省自然科学基金
关键词
低温光伏
异常特性
混晶半导体
Photovoltage at low temperature, Unusual behavior, DX center
