摘要
利用深能级瞬态谱（ＤＬＴＳ）方法研究了不同发光效率的掺Ｔｅ的ＧａＡｓ＿（１－ｘ）Ｐ＿ｘＬＥＤ中的深中心，探讨深能级对ＧａＡｓ＿（１－ｘ）Ｐ＿ｘ：ＴｅＬＥＤ发光效率的影响，结果表明，发射率激活能为０．４０ｅＶ的Ｂ能级是影响发光效率的主要无幅射中心．
Deep-levels in Te-doped GaAs_(1-x)P_x LEDs with different luminous efficiencyhad been studied by Deep-Level Transient Spectroscopy(DLTS).The effect of deep-levels on lu-minous efficiency of GaAs_(1-x)P_x: Te LEDs was discussed.The results show that the decrementof luminescence efficiency is due to the presence of the non-radiation center B with emission acti-vation energies of △E=0.40 eV.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1995年第5期715-718,共4页
Journal of Xiamen University：Natural Science
关键词
深能级
发光效率
混晶半导体
光电效应
GaAs_(1-x)P_x: Te LED, Deep level, DLTS spectrum, Luminous efficiency
